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NSVMUN5213DW1T3G - onsemi

Description: Dual NPN Bipolar Digital Transistor (BRT)

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NSVMUN5213DW1T3G Details

  • Manufacturer Part Number:

    NSVMUN5213DW1T3G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SC-88-6 / SC-70-6 / SOT-363-6

  • Manufacturer Package Code:

    419B-02

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    11 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Additional Feature:

    BUILT IN BIAS RESISTANCE RATIO IS 1

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

  • DC Current Gain-Min (hFE):

    80

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    0.385 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NSVMUN5213DW1T3G Frequently Asked Questions (FAQs)

  • The recommended PCB layout and thermal management for the NSVMUN5213DW1T3G can be found in the onsemi application note AND8406/D, which provides guidelines for PCB design, thermal management, and layout considerations to ensure optimal performance and reliability.
  • The selection of input and output capacitors depends on the specific application and operating conditions. A good starting point is to follow the recommendations in the datasheet and application notes. Additionally, onsemi provides a capacitor selection guide (AND8407/D) that can help engineers choose the right capacitors for their design.
  • The NSVMUN5213DW1T3G is designed to meet EMI and ESD standards, but engineers should still take precautions to minimize EMI and ESD risks in their design. onsemi provides guidelines for EMI and ESD protection in their application notes and datasheets. Engineers should also follow industry-standard EMI and ESD design practices.
  • Troubleshooting common issues with the NSVMUN5213DW1T3G requires a systematic approach. Engineers should consult the datasheet and application notes for troubleshooting guidelines, and also use onsemi's technical support resources, such as FAQs and knowledge base articles, to help identify and resolve issues.
  • The reliability and quality metrics for the NSVMUN5213DW1T3G can be found in the onsemi reliability report, which provides information on MTBF, FIT rates, and other reliability metrics. Engineers can request this report from onsemi or consult with their local sales representative.

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NSVMUN5213DW1T3G Overview

Use the download button to access the NSVMUN5213DW1T3G 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
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