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NSVMUN5312DW1T3G - onsemi

Description: Simplifies Circuit Design; Reduces Board Space; Reduces Component Count; S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant

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NSVMUN5312DW1T3G Details

  • Manufacturer Part Number:

    NSVMUN5312DW1T3G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SC-88-6 / SC-70-6 / SOT-363-6

  • Manufacturer Package Code:

    419B-02

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Additional Feature:

    BUILT IN BIAS RESISTANCE RATIO IS 1

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

  • DC Current Gain-Min (hFE):

    60

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN AND PNP

  • Power Dissipation-Max (Abs):

    0.385 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NSVMUN5312DW1T3G Frequently Asked Questions (FAQs)

  • Onsemi provides a recommended PCB layout in their application note AND9093/D, which includes guidelines for thermal vias, copper pours, and component placement to minimize thermal resistance and ensure reliable operation.
  • The input capacitor selection depends on the input voltage, ripple current, and ESR requirements. Onsemi recommends using a low-ESR ceramic capacitor with a minimum capacitance of 10uF and a voltage rating of 1.5 times the maximum input voltage. Refer to the application note AND9093/D for more details.
  • The NSVMUN5312DW1T3G can withstand a maximum voltage stress of 1.5 times the maximum rated voltage during startup or shutdown. However, it's recommended to limit the voltage stress to 1.2 times the maximum rated voltage to ensure reliable operation and minimize wear-out.
  • To ensure proper biasing during startup, Onsemi recommends using a soft-start circuit to limit the inrush current and provide a controlled voltage ramp-up. This can be achieved using an external soft-start circuit or an IC with built-in soft-start functionality.
  • The NSVMUN5312DW1T3G is rated for operation from -40°C to 150°C (TJ). However, Onsemi recommends operating the device within a temperature range of -20°C to 125°C for optimal performance and reliability.

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