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NSVMUN5314DW1T3G - onsemi

Description: Simplifies Circuit Design; Reduces Board Space; Reduces Component Count; S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant

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NSVMUN5314DW1T3G - onsemi PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - NSVMUN5314DW1T3G
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NSVMUN5314DW1T3G - onsemi  - 3D model - SOT23 (6-Pin) - NSVMUN5314DW1T3G
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NSVMUN5314DW1T3G Details

  • Manufacturer Part Number:

    NSVMUN5314DW1T3G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SC-88-6 / SC-70-6 / SOT-363-6

  • Manufacturer Package Code:

    419B-02

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Additional Feature:

    BUILT-IN BIAS RESISTOR RATIO 4.7

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

  • DC Current Gain-Min (hFE):

    80

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN AND PNP

  • Power Dissipation-Max (Abs):

    0.385 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NSVMUN5314DW1T3G Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the NSVMUN5314DW1T3G is -55°C to 150°C.
  • To ensure safe operating area, follow the guidelines in the datasheet for voltage, current, and power dissipation. Additionally, consider the device's thermal characteristics and ensure proper heat sinking.
  • The recommended gate drive voltage for the NSVMUN5314DW1T3G is between 10V and 15V to ensure optimal switching performance.
  • To minimize EMI, use proper PCB layout techniques, such as separating high-frequency and low-frequency circuits, using ground planes, and adding EMI filters or shielding if necessary.
  • The maximum allowed voltage for the gate-source (Vgs) and gate-drain (Vgd) pins is ±20V to prevent damage to the device.

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NSVMUN5314DW1T3G Overview

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