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NSVT65010MW6T1G - onsemi

Description: Current Gain Matching to 10%; Base−Emitter Voltage Matched to ≤ 2 mV; Drop−In Replacement for Standard Device; NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

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PCB Footprints
NSVT65010MW6T1G - onsemi PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - sot-363
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NSVT65010MW6T1G - onsemi  - 3D model - SOT23 (6-Pin) - sot-363
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NSVT65010MW6T1G Details

  • Manufacturer Part Number:

    NSVT65010MW6T1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SC-88-6 / SC-70-6 / SOT-363-6

  • Manufacturer Package Code:

    419B-02

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Base Capacitance-Max:

    4.5 pF

  • Collector-Emitter Voltage-Max:

    65 V

  • Configuration:

    SEPARATE, 2 ELEMENTS

  • DC Current Gain-Min (hFE):

    220

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    0.38 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    100 MHz

  • VCEsat-Max:

    0.65 V

NSVT65010MW6T1G Frequently Asked Questions (FAQs)

  • The recommended PCB layout involves placing the device near the edge of the board, using a solid ground plane, and minimizing thermal resistance. A thermal pad on the bottom of the package should be connected to a thermal vias array to dissipate heat efficiently.
  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended operating conditions, provide adequate heat sinking, and consider derating the device's power handling capabilities. Additionally, ensure that the PCB and surrounding components are rated for the expected operating temperature range.
  • The NSVT65010MW6T1G has built-in ESD protection, but it's still crucial to follow standard ESD handling precautions during assembly and testing, such as using an ESD wrist strap, mat, or workstation, and storing the devices in anti-static packaging.
  • The NSVT65010MW6T1G is a commercial-grade device, but onsemi offers other variants with enhanced reliability and automotive-grade options. For high-reliability or automotive applications, it's recommended to consult with onsemi's sales team or application engineers to determine the most suitable device for the specific requirements.
  • The recommended soldering conditions involve using a soldering iron with a temperature range of 250°C to 260°C, and a soldering time of 3-5 seconds. For rework, it's essential to follow onsemi's recommended rework procedures and guidelines to avoid damaging the device.

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