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NT5AD256M16E4-JRI - Nanya

Description: Data Integrity - Auto Self Refresh (ASR) by DRAM built-in TS - Auto Refresh and Self Refresh Modes  DRAM Access Bandwidth - Separated IO gating structures by Bank Groups - Self Refresh Abort - Fine Granularity Refresh  Signal Synchronization - Write Leveling via MR settings1 - Read Leveling via MPR  Reliability & Error Handling - Command/Address Parity - Databus Write CRC - MPR readout - Boundary Scan (X16) - Post Package Repair

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PCB Footprints
NT5AD256M16E4-JRI - Nanya PCB footprint - BGA - BGA - 96 Ball TFBGA
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NT5AD256M16E4-JRI Details

  • Manufacturer Part Number:

    NT5AD256M16E4-JRI

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Taiwan

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.36

  • Manufacturer:

    Nanya Technology Corporation

  • YTEOL:

    5.1

  • Access Mode:

    FOUR BANK PAGE BURST

  • Clock Frequency-Max (fCLK):

    1600 MHz

  • I/O Type:

    COMMON

  • Interleaved Burst Length:

    4,8

  • JESD-30 Code:

    R-PBGA-B96

  • Length:

    13 mm

  • Memory Density:

    4294967296 bit

  • Memory IC Type:

    DDR4 DRAM

  • Memory Width:

    16

  • Number of Functions:

    1

  • Number of Ports:

    1

  • Number of Terminals:

    96

  • Number of Words:

    268435456 words

  • Number of Words Code:

    256000000

  • Operating Mode:

    SYNCHRONOUS

  • Operating Temperature-Max:

    95 °C

  • Operating Temperature-Min:

    -40 °C

  • Organization:

    256MX16

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    TFBGA

  • Package Equivalence Code:

    BGA96,9X16,32

  • Package Shape:

    RECTANGULAR

  • Package Style:

    GRID ARRAY, THIN PROFILE, FINE PITCH

  • Seated Height-Max:

    1.2 mm

  • Self Refresh:

    YES

  • Sequential Burst Length:

    4,8

  • Standby Current-Max:

    0.059 A

  • Supply Current-Max:

    0.348 mA

  • Supply Voltage-Max (Vsup):

    1.26 V

  • Supply Voltage-Min (Vsup):

    1.14 V

  • Supply Voltage-Nom (Vsup):

    1.2 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Terminal Form:

    BALL

  • Terminal Pitch:

    0.8 mm

  • Terminal Position:

    BOTTOM

  • Width:

    7.5 mm

NT5AD256M16E4-JRI Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for NT5AD256M16E4-JRI is 0°C to 95°C.
  • Yes, NT5AD256M16E4-JRI is RoHS (Restriction of Hazardous Substances) compliant, meaning it meets the EU's standards for reducing hazardous substances in electronic components.
  • The refresh interval for NT5AD256M16E4-JRI is 7.8us (microseconds) at 1.8V, which is a typical value for DDR4 DRAMs.
  • No, NT5AD256M16E4-JRI is designed to operate at 1.2V, and using it with a different voltage supply may damage the module or affect its performance.
  • While NT5AD256M16E4-JRI is a standard DDR4 DRAM module, compatibility with other modules from different manufacturers depends on the specific system design and requirements. It's recommended to check with the system manufacturer or designer for compatibility.

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NT5AD256M16E4-JRI Overview

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