Part Image

NT5CB128M16JR-FL - Nanya

Description: Automotive DDR3(L) 2Gb SDRAM

Download NT5CB128M16JR-FL Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
NT5CB128M16JR-FL - Nanya PCB footprint - BGA - BGA - 96 Ball TFBGA
click to zoom
3D Models
NT5CB128M16JR-FL - Nanya  - 3D model - BGA - 96 Ball TFBGA
click to zoom

NT5CB128M16JR-FL Details

  • Manufacturer Part Number:

    NT5CB128M16JR-FL

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TFBGA-96

  • Country Of Origin:

    Taiwan

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.36

  • Date Of Intro:

    2017-11-30

  • Manufacturer:

    Nanya Technology Corporation

  • YTEOL:

    4

  • Access Mode:

    MULTI BANK PAGE BURST

  • Clock Frequency-Max (fCLK):

    1066 MHz

  • I/O Type:

    COMMON

  • Interleaved Burst Length:

    8

  • JESD-30 Code:

    R-PBGA-B96

  • Length:

    13 mm

  • Memory Density:

    2147483648 bit

  • Memory IC Type:

    DDR3 DRAM

  • Memory Width:

    16

  • Number of Functions:

    1

  • Number of Ports:

    1

  • Number of Terminals:

    96

  • Number of Words:

    134217728 words

  • Number of Words Code:

    128000000

  • Operating Mode:

    SYNCHRONOUS

  • Operating Temperature-Max:

    95 °C

  • Organization:

    128MX16

  • Output Characteristics:

    3-STATE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    TFBGA

  • Package Equivalence Code:

    BGA96,9X16,32

  • Package Shape:

    RECTANGULAR

  • Package Style:

    GRID ARRAY, THIN PROFILE, FINE PITCH

  • Refresh Cycles:

    8192

  • Seated Height-Max:

    1.2 mm

  • Self Refresh:

    YES

  • Sequential Burst Length:

    8

  • Standby Current-Max:

    0.011 A

  • Supply Current-Max:

    0.16 mA

  • Supply Voltage-Max (Vsup):

    1.575 V

  • Supply Voltage-Min (Vsup):

    1.425 V

  • Supply Voltage-Nom (Vsup):

    1.5 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Terminal Finish:

    Tin/Silver/Copper (Sn/Ag/Cu)

  • Terminal Form:

    BALL

  • Terminal Pitch:

    0.8 mm

  • Terminal Position:

    BOTTOM

  • Width:

    7.5 mm

NT5CB128M16JR-FL Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for NT5CB128M16JR-FL is 0°C to 95°C.
  • To ensure signal integrity, it is recommended to use a signal integrity analysis tool to simulate the signal behavior and optimize the PCB design. Additionally, following the JEDEC standard for DDR3 SDRAM signal routing and termination is crucial.
  • The refresh interval for NT5CB128M16JR-FL is 64ms, which is a standard refresh interval for DDR3 SDRAM.
  • No, NT5CB128M16JR-FL is designed to operate at a voltage supply of 1.5V ± 0.075V. Using it with a different voltage supply may damage the device or affect its performance.
  • The ZQ calibration is done internally by the DDR3 SDRAM during power-up. No external calibration is required. However, it is recommended to follow the JEDEC standard for ZQ calibration to ensure proper operation.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

NT5CB128M16JR-FL Overview

Use the download button to access the NT5CB128M16JR-FL schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like NT5CB, or try a keyword search, such as DRAMs

Parts related to NT5CB128M16JR-FL

Showing 0 results