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NTA4151PT1G - onsemi

Description: Low RDS(on) for Higher Efficiency and Longer Battery Life; Small Outline Package (1.6 x 1.6 mm); ESD Protected Gate; RoHS Compliant

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PCB Footprints
NTA4151PT1G - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SC-75 SOT-416 CASE 463-01 ISSUE F
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3D Models
NTA4151PT1G - onsemi  - 3D model - SOT23 (3-Pin) - SC-75 SOT-416 CASE 463-01 ISSUE F
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NTA4151PT1G Details

  • Manufacturer Part Number:

    NTA4151PT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SC-75 (SOT-416) 3 LEAD

  • Pin Count:

    3

  • Manufacturer Package Code:

    463-01

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    6.9

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    0.76 A

  • Drain-source On Resistance-Max:

    0.36 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    0.15 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTA4151PT1G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Monitor the device's junction temperature, voltage, and current to ensure they are within the specified limits. Use a thermal management system and follow the recommended PCB layout to prevent overheating.
  • A 10uF to 22uF X7R or X5R ceramic capacitor is recommended for the input capacitor. The capacitor should be placed as close to the device as possible to minimize parasitic inductance.
  • Use a voltage supervisor or a voltage monitor IC to detect overvoltage and undervoltage conditions. Add a TVS diode or a zener diode to clamp the input voltage to a safe level.
  • A 10uF to 22uF X7R or X5R ceramic capacitor is recommended for the output capacitor. The capacitor should be placed as close to the device as possible to minimize parasitic inductance.

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NTA4151PT1G Overview

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Part Image NTA4151PT1H onsemi

Small Signal Field-Effect Transistor, 0.76A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET