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NTB5605PT4G - onsemi

Description: Obsolete - Power MOSFET 60V 169A 3.0 mOhm Single N-Channel D2PAK Logic Level

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PCB Footprints
NTB5605PT4G - onsemi PCB footprint - Other - Other - D2PAK 3 CASE 418B−04 ISSUE L_5
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3D Models
NTB5605PT4G - onsemi  - 3D model - Other - D2PAK 3 CASE 418B−04 ISSUE L_5
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NTB5605PT4G Details

  • Manufacturer Part Number:

    NTB5605PT4G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    D2PAK 2 LEAD

  • Pin Count:

    3

  • Manufacturer Package Code:

    418B-04

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    338 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    18.5 A

  • Drain-source On Resistance-Max:

    0.14 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    73.5 W

  • Pulsed Drain Current-Max (IDM):

    55 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTB5605PT4G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias under the device can help to dissipate heat efficiently. The datasheet provides a recommended land pattern, but a more detailed layout guide can be found in the onsemi application note AND9093/D.
  • The NTB5605PT4G requires a specific biasing scheme to achieve optimal performance. A recommended biasing circuit is shown in the datasheet, but it's essential to ensure that the voltage and current sources are stable and well-regulated to prevent oscillations or instability.
  • Operating the NTB5605PT4G beyond the recommended temperature range (–40°C to 150°C) can lead to reduced performance, decreased reliability, and potentially even device failure. It's essential to ensure that the device is operated within the specified temperature range to maintain optimal performance and reliability.
  • To troubleshoot issues with the NTB5605PT4G, start by verifying the biasing circuit and ensuring that the voltage and current sources are stable and well-regulated. Check for any signs of overheating, and verify that the device is operated within the recommended temperature range. If issues persist, consult the onsemi application notes and technical support resources for further guidance.
  • The NTB5605PT4G is a sensitive device that requires proper ESD protection and handling to prevent damage. It's essential to follow proper ESD handling procedures, such as using an ESD wrist strap or mat, and storing the device in an anti-static bag or container. Consult the onsemi application notes and technical support resources for more information on ESD protection and handling.

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NTB5605PT4G Overview

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NTB5605PT4G Alternates

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Image Part Number Model
Part Image NTB5605PG Rochester Electronics LLC

18.5A, 60V, 0.14ohm, P-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 418B-04, D2PAK-3

Part Image NTB5605PT4G Rochester Electronics LLC

18.5A, 60V, 0.14ohm, P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, CASE 418B-04, D2PAK-3

Part Image NTB5605PG onsemi

Power Field-Effect Transistor, 18.5A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image NTB5605PT4 onsemi

Power Field-Effect Transistor, 18.5A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image NTB5605P onsemi

Power Field-Effect Transistor, 18.5A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

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