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NTBGS001N06C - onsemi

Description: Low RDS(on); Low QG and Capacitance; Lowers Switching Noise/EMI; These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

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NTBGS001N06C - onsemi  - 3D model
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NTBGS001N06C Details

  • Manufacturer Part Number:

    NTBGS001N06C

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    D2PAK7 (TO-263-7LD) 15.4x9.9x4.5

  • Package Description:

    D2PAK-7/6

  • Manufacturer Package Code:

    221BP

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    111 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    363 A

  • Drain-source On Resistance-Max:

    0.001 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    53 pF

  • JEDEC-95 Code:

    TO-263CB

  • JESD-30 Code:

    R-PSSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    250 W

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTBGS001N06C Frequently Asked Questions (FAQs)

  • A good PCB layout for optimal thermal performance involves placing the device near a thermal pad or heat sink, using thermal vias to dissipate heat, and keeping the surrounding area clear of other components to allow for airflow.
  • To ensure reliable operation in high-temperature environments, follow the recommended operating temperature range, use a heat sink or thermal pad, and consider derating the device's power handling capabilities.
  • The recommended gate drive circuits for the NTBGS001N06C typically involve a gate driver IC, such as the FAN5350, with a suitable gate resistance and voltage supply to ensure proper switching characteristics.
  • To protect the device from EOS and ESD, use proper handling and storage procedures, implement ESD protection circuits, such as TVS diodes, and follow recommended PCB design guidelines for ESD protection.
  • The internal gate resistance of the NTBGS001N06C can affect the device's switching speed and losses. It's essential to consider this resistance when designing the gate drive circuit and selecting the gate resistance to ensure optimal performance.

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NTBGS001N06C Overview

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