NTBGS Model Download Search Results
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NTBGS6D5N15MC
onsemi
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1 | Low RDS(on); Low QG; Lowers Switching Noise/EMI; These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant | Other | NTBGS6D5N15MC |
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NTBGS4D1N15MC
onsemi
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1 | Low RDS(on); Low QG; Lowers Switching Noise/EMI; These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant | Other | NTBGS4D1N15MC |
3
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NTBGS3D5N06C
onsemi
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1 | Power Field-Effect Transistor, 127A I(D), 60V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB | NTBGS3D5N06C |
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NTBGS002N06C
onsemi
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1 | Low RDS(on); Low QG; Lowers Switching Noise/EMI; These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant | NTBGS002N06C |
1
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NTBGS001N06C
onsemi
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1 | Low RDS(on); Low QG and Capacitance; Lowers Switching Noise/EMI; These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant | NTBGS001N06C |
1
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NTBGS2D5N06C
onsemi
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1 | Power Field-Effect Transistor, 224A I(D), 60V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB | NTBGS2D5N06C |
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NTBGS1D5N06C
onsemi
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1 | Low RDS(on); Low QG; Lowers Switching Noise/EMI; These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant | NTBGS1D5N06C |
1
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NTBGS1D2N08H
onsemi
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1 | Power Field-Effect Transistor, 261A I(D), 80V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB | NTBGS1D2N08H |
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NTBGS2D9N12MC
onsemi
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1 | Power Field-Effect Transistor, 227A I(D), 120V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB | NTBGS2D9N12MC |
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NTBGS004N10G
onsemi
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1 | Power MOSFET, N Channel, 100 V, 203 A, 4.1 mohm @ 10 V, TO-263 (D2PAK), Surface Mount | NTBGS004N10G |
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![Part Image](["https://componentsearchengine.com/Images/3/NTBGS004N10G.jpg",null,null])
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