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NTD20N06LT4G - onsemi

Description: RoHS Compliant

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NTD20N06LT4G Details

  • Manufacturer Part Number:

    NTD20N06LT4G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    DPAK (SINGLE GAUGE) TO-252

  • Package Description:

    DPAK-3

  • Pin Count:

    3

  • Manufacturer Package Code:

    369C

  • Country Of Origin:

    Mainland China, Malaysia, Vietnam

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    2 Days

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    128 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    20 A

  • Drain-source On Resistance-Max:

    0.048 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    60 W

  • Pulsed Drain Current-Max (IDM):

    60 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTD20N06LT4G Frequently Asked Questions (FAQs)

  • The maximum junction temperature of the NTD20N06LT4G is 150°C.
  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking and ensuring good airflow around the device.
  • The recommended gate resistor value for the NTD20N06LT4G is typically in the range of 1 kΩ to 10 kΩ, depending on the specific application and switching frequency.
  • Yes, the NTD20N06LT4G is suitable for high-frequency switching applications up to 1 MHz, but it's essential to consider the device's switching losses and ensure proper thermal management.
  • To protect the NTD20N06LT4G from ESD, it's essential to follow proper handling and storage procedures, such as using anti-static wrist straps, mats, and packaging materials.

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NTD20N06LT4G Overview

Use the download button to access the NTD20N06LT4G 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like NTD20, or try a keyword search, such as Power Field-Effect Transistors

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Part Image NTD20N06LG onsemi

Power Field-Effect Transistor, 20A I(D), 60V, 0.048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image NTD20N06L-1G onsemi

Power Field-Effect Transistor, 20A I(D), 60V, 0.048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image NTD20N06L-1 onsemi

Power Field-Effect Transistor, 20A I(D), 60V, 0.048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image NTD20N06L onsemi

Power Field-Effect Transistor, 20A I(D), 60V, 0.048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

For a full list of alternate parts for NTD20N06LT4G, check out Findchips.com