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NTD24N06LT4G - onsemi

Description: N-Channel 60 V 24A (Ta) 1.36W (Ta), 62.5W (Tj) Surface Mount DPAK, -55°C ~ 155°C (TJ)

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PCB Footprints
NTD24N06LT4G - onsemi PCB footprint - Other - Other - DPAK (SINGLE GAUGE) CASE 369C ISSUE G_2025-8
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3D Models
NTD24N06LT4G - onsemi  - 3D model - Other - DPAK (SINGLE GAUGE) CASE 369C ISSUE G_2025-8
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NTD24N06LT4G Details

  • Manufacturer Part Number:

    NTD24N06LT4G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK (SINGLE GAUGE) TO-252

  • Package Description:

    DPAK-3/2

  • Pin Count:

    3

  • Manufacturer Package Code:

    369C

  • Country Of Origin:

    Mainland China, Malaysia, Vietnam

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    17 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Additional Feature:

    LOGIC LEVEL COMPATIBLE

  • Avalanche Energy Rating (Eas):

    162 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    24 A

  • Drain-source On Resistance-Max:

    0.045 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1.36 W

  • Pulsed Drain Current-Max (IDM):

    72 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTD24N06LT4G Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) for the NTD24N06LT4G is 150°C. Exceeding this temperature can lead to device failure.
  • To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V and 5V, and the drain-source voltage (Vds) should be between 10V and 24V. Additionally, the gate current (Ig) should be limited to 100mA or less.
  • To minimize parasitic inductance, it is recommended to use a compact PCB layout with short, wide traces for the drain and source pins. Additionally, a ground plane should be used to reduce electromagnetic interference (EMI).
  • Yes, the NTD24N06LT4G is suitable for high-frequency switching applications up to 1MHz. However, the user should ensure that the device is properly biased and the PCB layout is optimized to minimize parasitic inductance and capacitance.
  • To protect the NTD24N06LT4G from ESD, it is recommended to use ESD protection devices such as TVS diodes or ESD protection arrays on the input and output pins. Additionally, proper handling and storage procedures should be followed to prevent ESD damage.

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NTD24N06LT4G Overview

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