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NTD25P03LT4G - onsemi

Description: RoHS Compliant

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NTD25P03LT4G - onsemi PCB footprint - Other - Other - DPAK  (SINGLE  GAUGE) CASE 369C ISSUE G
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NTD25P03LT4G - onsemi  - 3D model - Other - DPAK  (SINGLE  GAUGE) CASE 369C ISSUE G
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NTD25P03LT4G Details

  • Manufacturer Part Number:

    NTD25P03LT4G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK (SINGLE GAUGE) TO-252

  • Package Description:

    DPAK-3

  • Pin Count:

    3

  • Manufacturer Package Code:

    369C

  • Country Of Origin:

    Mainland China, Malaysia, Vietnam

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5.32

  • Additional Feature:

    LOGIC LEVEL COMPATIBLE

  • Avalanche Energy Rating (Eas):

    200 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    25 A

  • Drain-source On Resistance-Max:

    0.08 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    75 W

  • Pulsed Drain Current-Max (IDM):

    75 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTD25P03LT4G Frequently Asked Questions (FAQs)

  • The maximum junction temperature that the NTD25P03LT4G can withstand is 150°C.
  • To ensure reliability, it is recommended to follow the recommended operating conditions, use a proper thermal design, and implement adequate cooling mechanisms to prevent overheating.
  • A recommended PCB layout and thermal design for the NTD25P03LT4G involves using a multi-layer PCB with a solid ground plane, placing the device near a heat sink or thermal pad, and ensuring good thermal conductivity between the device and the heat sink.
  • To handle the high current handling capability of the NTD25P03LT4G, it is recommended to use a robust PCB design with wide traces, implement adequate heat sinking, and ensure that the device is properly cooled to prevent overheating.
  • The NTD25P03LT4G has built-in ESD protection, but it is still recommended to follow proper ESD handling procedures during assembly and handling to prevent damage to the device.

Trust Checks

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Manufacturer Collaborated
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NTD25P03LT4G Overview

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Part Image NTD25P03LT4G Rochester Electronics LLC

25A, 30V, 0.08ohm, P-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 369C-01, DPAK-3

Part Image NTD25P03LT4 Rochester Electronics LLC

25A, 30V, 0.08ohm, P-CHANNEL, Si, POWER, MOSFET, CASE 369C-01, DPAK-3

Part Image NTD25P03L onsemi

Power Field-Effect Transistor, 25A I(D), 30V, 0.08ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image NTD25P03LRLG onsemi

Power Field-Effect Transistor, 25A I(D), 30V, 0.08ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image NTD25P03LG onsemi

Power Field-Effect Transistor, 25A I(D), 30V, 0.08ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

For a full list of alternate parts for NTD25P03LT4G, check out Findchips.com