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NTD3055L104T4G - onsemi

Description: Lower RDS(on); Lower VDS(on); Tighter VSD Specification; Lower Diode Reverse Recovery Time; Lower Reverse Recovery Stored Charge; RoHS Compliant

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NTD3055L104T4G - onsemi - PCB symbol
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PCB Footprints
NTD3055L104T4G - onsemi PCB footprint - Other - Other - DPAK (SINGLE GAUGE) CASE 369C ISSUE G
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3D Models
NTD3055L104T4G - onsemi - 3D model - Other - DPAK (SINGLE GAUGE) CASE 369C ISSUE G
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NTD3055L104T4G Details

  • Manufacturer Part Number:

    NTD3055L104T4G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK (SINGLE GAUGE) TO-252

  • Pin Count:

    3

  • Manufacturer Package Code:

    369C

  • Country Of Origin:

    Mainland China, Malaysia, Vietnam

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.4

  • Avalanche Energy Rating (Eas):

    61 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    12 A

  • Drain-source On Resistance-Max:

    0.104 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    48 W

  • Pulsed Drain Current-Max (IDM):

    45 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTD3055L104T4G Frequently Asked Questions (FAQs)

  • A thermal pad on the bottom of the package should be connected to a large copper area on the PCB to dissipate heat. Multiple vias can be used to connect the thermal pad to an inner layer or the backside of the PCB for better heat dissipation.
  • The device requires a stable voltage supply and a proper biasing circuit to ensure optimal performance. A voltage regulator can be used to regulate the supply voltage, and a biasing circuit with a resistor and capacitor can be used to set the gate-source voltage.
  • The device is sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Handle the device in an ESD-protected environment, and use ESD-protective packaging and handling materials.
  • The maximum power dissipation of the device can be determined by calculating the maximum current and voltage ratings specified in the datasheet. The power dissipation can be calculated using the formula P = V x I, where P is the power dissipation, V is the voltage, and I is the current.
  • The NTD3055L104T4G meets the reliability and quality standards of the Automotive Electronics Council (AEC) and the International Electrotechnical Commission (IEC). It also meets the quality standards of onsemi, including ISO/TS 16949 and ISO 9001.

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NTD3055L104T4G Overview

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NTD3055L104T4G Alternates

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Power Field-Effect Transistor, 12A I(D), 60V, 0.104ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Part Image NTD3055L104T4 onsemi

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