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NTE128 - NTE ELECTRONICS

Description: Trans GP BJT NPN 80V 1A 800mW 3-Pin TO-39

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NTE128 - NTE ELECTRONICS PCB footprint - Other - Other - NTE128-3
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NTE128 - NTE ELECTRONICS  - 3D model - Other - NTE128-3
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NTE128 Details

  • Manufacturer Part Number:

    NTE128

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    NTE Electronics Inc

  • YTEOL:

    0

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    1 A

  • Collector-Emitter Voltage-Max:

    80 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    15

  • JEDEC-95 Code:

    TO-39

  • JESD-30 Code:

    O-MBCY-W3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Package Body Material:

    METAL

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    1 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    WIRE

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    100 MHz

NTE128 Frequently Asked Questions (FAQs)

  • The maximum safe operating temperature for the NTE128 is 150°C, as specified in the datasheet. However, it's recommended to operate the transistor within a temperature range of 25°C to 125°C for optimal performance and reliability.
  • While the NTE128 can be used as a switch, it's not recommended for high-frequency circuits due to its relatively high transition frequency (fT) of 30 MHz. For high-frequency applications, a transistor with a higher fT is recommended.
  • To ensure proper biasing for linear amplifier applications, follow these steps: 1) Choose a suitable collector-emitter voltage (Vce) and collector current (Ic) based on the application requirements. 2) Select a suitable base-emitter voltage (Vbe) and base current (Ib) to achieve the desired quiescent point. 3) Use a voltage divider or other biasing network to establish the desired Vbe and Ib. 4) Verify the transistor's operating point using a load line analysis or simulation tools.
  • The maximum collector current (Ic) that the NTE128 can handle is 1 A, as specified in the datasheet. However, it's recommended to operate the transistor within a safe operating area (SOA) to ensure reliability and prevent thermal runaway.
  • Yes, the NTE128 can be used in a push-pull amplifier configuration. However, it's essential to ensure that the transistors are properly matched and biased to minimize distortion and ensure optimal performance.

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