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NTGS4141NT1G - onsemi

Description: Low RDS(on); Low Gate Charge

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NTGS4141NT1G - onsemi PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - TSOP
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NTGS4141NT1G - onsemi  - 3D model - SOT23 (6-Pin) - TSOP
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NTGS4141NT1G Details

  • Manufacturer Part Number:

    NTGS4141NT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TSOP-6

  • Pin Count:

    6

  • Manufacturer Package Code:

    318G-02

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    7.07

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    3.5 A

  • Drain-source On Resistance-Max:

    0.025 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTGS4141NT1G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias under the device can help to dissipate heat efficiently. The datasheet provides a recommended land pattern, but a more detailed layout guide can be found in the onsemi application note AND9093/D.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended thermal design guidelines, including proper heat sinking, thermal interface material selection, and airflow management. Additionally, consider using a thermocouple or thermistor to monitor the device temperature and implement thermal protection mechanisms.
  • The RSENSE value affects the accuracy of current sensing and the power consumption of the device. A smaller RSENSE value increases the current sense accuracy but also increases power consumption. A larger RSENSE value reduces power consumption but may compromise accuracy. Optimize RSENSE based on system requirements and constraints.
  • The NTGS4141NT1G has built-in OCP and SCP features. To handle these features, ensure that the system is designed to detect and respond to fault conditions, such as overcurrent or short-circuit events. This may involve implementing external circuitry or using a microcontroller to monitor and respond to fault conditions.
  • The NTGS4141NT1G has built-in ESD protection, but it's still essential to follow proper ESD handling and storage procedures to prevent damage. Ensure that the device is handled and stored in an ESD-protected environment, and consider adding external ESD protection devices if necessary.

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NTGS4141NT1G Overview

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Part Image NTGS4141NT1 onsemi

Small Signal Field-Effect Transistor, 3.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET