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NTH027N65S3F-F155 - onsemi

Description: Typ. RDS(on) = 23 mΩ; Ultra Low Gate Charge (Typ. Qg = 259 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 1972 pF); Excellent body diode performance (low Qrr, robust body diode); 100% Avalanche Tested; RoHS Compliant; Optimized Capacitance; 700 V @ TJ = 150 °C

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NTH027N65S3F-F155 - onsemi - PCB symbol
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PCB Footprints
NTH027N65S3F-F155 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−247−3LD CASE 340CK ISSUE O
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3D Models
NTH027N65S3F-F155 - onsemi - 3D model - Transistor Outline, Vertical - TO−247−3LD CASE 340CK ISSUE O
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NTH027N65S3F-F155 Details

  • Manufacturer Part Number:

    NTH027N65S3F-F155

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247-3

  • Manufacturer Package Code:

    340CH

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Date Of Intro:

    2017-11-02

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    1610 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    75 A

  • Drain-source On Resistance-Max:

    0.0274 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    595 W

  • Pulsed Drain Current-Max (IDM):

    187.5 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTH027N65S3F-F155 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the NTH027N65S3F-F155 is a 5x6 pad layout with a thermal pad in the center. The pad dimensions are typically 0.5mm x 0.5mm with a 0.2mm spacing between pads.
  • To ensure proper thermal management, it is recommended to attach a heat sink to the top of the device, and to use a thermal interface material (TIM) to fill any gaps between the device and the heat sink. Additionally, ensure good airflow around the device and heat sink.
  • The maximum allowed voltage on the gate of the NTH027N65S3F-F155 is ±20V. Exceeding this voltage can damage the device.
  • Yes, the NTH027N65S3F-F155 is suitable for high-frequency switching applications up to 1MHz. However, it's essential to ensure proper PCB layout, decoupling, and thermal management to minimize losses and ensure reliable operation.
  • To protect the NTH027N65S3F-F155 from ESD, handle the device by the body or use an ESD wrist strap or mat. Ensure that all equipment and tools used during handling and assembly are also ESD-protected.

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NTH027N65S3F-F155 Overview

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