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NTH027N65S3F-F155
onsemi
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1 | Typ. RDS(on) = 23 mΩ; Ultra Low Gate Charge (Typ. Qg = 259 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 1972 pF); Excellent body diode performance (low Qrr, robust body diode); 100% Avalanche Tested; RoHS Compliant; Optimized Capacitance; 700 V @ TJ = 150 °C | Transistor Outline, Vertical | NTH027N65S3F-F155 |
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