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NTH4L040N65S3F - onsemi

Description: Excellent body diode performance (low Qrr, robust body diode); Optimized Capacitance; 700 V @ TJ = 150 oC; Ultra Low Gate Charge (Typ. Qg = 158 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 1366 pF); Kelvin contact; RoHS Compliant; Typ. RDS(on) = 32 mΩ; Typ. RDS(on) = 32 mΩ

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NTH4L040N65S3F Details

  • Manufacturer Part Number:

    NTH4L040N65S3F

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247-4

  • Package Description:

    TO-247, 4 PIN

  • Manufacturer Package Code:

    340CJ

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    1009 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    65 A

  • Drain-source On Resistance-Max:

    0.04 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T4

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    446 W

  • Power Dissipation-Max (Abs):

    446 W

  • Pulsed Drain Current-Max (IDM):

    162.5 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTH4L040N65S3F Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves using a thermal pad on the bottom of the package, connecting it to a large copper area on the PCB, and using multiple vias to dissipate heat to the other layers. A minimum of 2oz copper thickness is recommended.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions, including junction temperature (Tj) and ambient temperature (Ta). Also, ensure proper thermal design, including heat sinking and airflow, to keep the device within the specified temperature range.
  • The NTH4L040N65S3F has built-in ESD protection, but it's still recommended to follow standard ESD handling procedures during assembly and testing. Additionally, consider adding external ESD protection devices, such as TVS diodes, to protect the device from external ESD events.
  • Yes, the NTH4L040N65S3F is qualified for automotive and high-reliability applications. However, it's essential to review the device's AEC-Q101 qualification and ensure that it meets the specific requirements of your application. Additionally, consider using a qualified manufacturer's part, such as onsemi, to ensure compliance with industry standards.
  • The optimal gate drive voltage for the NTH4L040N65S3F depends on the specific application and operating conditions. As a general guideline, a gate drive voltage of 10-15V is recommended. However, it's essential to review the device's datasheet and application notes to determine the optimal gate drive voltage for your specific use case.

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NTH4L040N65S3F Overview

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