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NTH4LN019N65S3H - onsemi

Description: 700 V @ TJ = 150 oC; Low Effective Output Capacitance (Typ. Coss(eff.) = 2495 pF); Ultra Low Gate Charge (Typ. Qg = 282 nC); Fast switching performance with robust body diode; Kelvin Source configuration; 100% Avalanche Tested; RoHS Compliant; Typ. RDS(on) = 15 mΩ; Internal Gate Resistance: 1.1 Ω

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NTH4LN019N65S3H Details

  • Manufacturer Part Number:

    NTH4LN019N65S3H

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247 4-LEAD, THIN LEADS

  • Manufacturer Package Code:

    340CW

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    1421 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    75 A

  • Drain-source On Resistance-Max:

    0.0193 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T4

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    5 W

  • Pulsed Drain Current-Max (IDM):

    328 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTH4LN019N65S3H Frequently Asked Questions (FAQs)

  • A good PCB layout for optimal thermal performance involves placing the device near a thermal pad or heat sink, using thermal vias to dissipate heat, and keeping the surrounding area clear of other components to allow for airflow.
  • To ensure reliable operation at high temperatures, follow the recommended operating conditions, use a suitable heat sink, and consider derating the device's power handling capabilities according to the temperature derating curve provided in the datasheet.
  • To prevent ESD damage, handle the device with ESD-protective equipment, use ESD-protected workbenches, and follow proper handling and storage procedures. Additionally, consider adding external ESD protection devices, such as TVS diodes, to the circuit design.
  • The NTH4LN019N65S3H is an AEC-Q101 qualified device, making it suitable for automotive applications. However, for high-reliability applications, it's essential to follow the recommended operating conditions, perform thorough testing, and consider additional qualification procedures.
  • When selecting a gate driver for the NTH4LN019N65S3H, consider the device's gate charge, threshold voltage, and switching frequency requirements. Choose a gate driver that can provide the necessary current and voltage to ensure reliable switching and minimize power losses.

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NTH4LN019N65S3H Overview

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