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NTHD3100CT1 - onsemi

Description: Mosfet Array 20V 2.9A, 3.2A 1.1W Surface Mount ChipFET™

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NTHD3100CT1 Details

  • Manufacturer Part Number:

    NTHD3100CT1

  • Brand Name:

    onsemi

  • Pbfree Code:

    No

  • Rohs Code:

    No

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    ChipFET

  • Package Description:

    CHIPFET-8

  • Pin Count:

    8

  • Manufacturer Package Code:

    1206A-03

  • Reach Compliance Code:

    Not Compliant

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    2.9 A

  • Drain-source On Resistance-Max:

    0.08 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-XDSO-C8

  • JESD-609 Code:

    e0

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    235

  • Polarity/Channel Type:

    N-CHANNEL AND P-CHANNEL

  • Power Dissipation-Max (Abs):

    1.1 W

  • Pulsed Drain Current-Max (IDM):

    12 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin/Lead (Sn80Pb20)

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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NTHD3100CT1 Overview

Use the download button to access the NTHD3100CT1 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
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Part Image NTHD3100CT1G onsemi

Power Field-Effect Transistor, 2.9A I(D), 20V, 0.08ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image NTHD3100CT3G onsemi

Power Field-Effect Transistor, 2.9A I(D), 20V, 0.08ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET