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NTHL022N120M3S - onsemi

Description: New M3S technology: 22 mohm RDS(ON) with low Eon and Eoff losses; Ultra Low Gate Charge (QG(tot) = 137 nC); High Speed Switching with Low Capacitance (Coss = 146 pF); 15V to 18V Gate Drive; Excellent FOM [ = Rdson * Eoss ]; 100% Avalanche Tested; Halide Free and RoHS Compliant

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NTHL022N120M3S Details

  • Manufacturer Part Number:

    NTHL022N120M3S

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247-3LD

  • Manufacturer Package Code:

    340CX

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    267 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    89 A

  • Drain-source On Resistance-Max:

    0.03 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    14 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    348 W

  • Pulsed Drain Current-Max (IDM):

    275 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

NTHL022N120M3S Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves using a thermal pad on the bottom of the device, connecting it to a large copper area on the PCB, and using multiple vias to dissipate heat. A minimum of 2oz copper thickness is recommended.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended derating curves, ensure good thermal design, and avoid exceeding the maximum junction temperature (Tj) of 150°C. Additionally, consider using a thermal interface material (TIM) to improve heat transfer between the device and the heat sink.
  • The maximum allowed voltage transient on the drain-source pins is 120% of the maximum rated voltage (Vds) for a duration of less than 10ms. Exceeding this limit can cause damage to the device.
  • To protect the device from ESD, handle the device by the body or pins, use an ESD wrist strap or mat, and ensure that the PCB has ESD protection components such as TVS diodes or resistors. Additionally, follow proper soldering and assembly procedures to prevent ESD damage.
  • The recommended gate drive voltage is 10-15V, and the recommended gate current is 1-2A. This ensures optimal switching performance, low switching losses, and reliable operation.

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