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NTHL160N120SC1 - onsemi

Description: Silicon Carbide (SiC) MOSFET – EliteSiC, 160 mohm, 1200V, M1, TO-247-3L

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PCB Footprints
NTHL160N120SC1 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO247−3L
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3D Models
NTHL160N120SC1 - onsemi  - 3D model - Transistor Outline, Vertical - TO247−3L
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NTHL160N120SC1 Details

  • Manufacturer Part Number:

    NTHL160N120SC1

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247-3LD

  • Manufacturer Package Code:

    340CX

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    128 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    17 A

  • Drain-source On Resistance-Max:

    0.224 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    5 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    119 W

  • Pulsed Drain Current-Max (IDM):

    69 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

NTHL160N120SC1 Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) for the NTHL160N120SC1 is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to prevent thermal runaway.
  • To ensure proper cooling, it's essential to provide a heat sink with a thermal resistance (Rth) of less than 1°C/W. The heat sink should be attached to the device using a thermal interface material (TIM) with a thermal conductivity of at least 1 W/m-K. Additionally, ensure good airflow around the heat sink to dissipate heat efficiently.
  • The recommended gate drive voltage for the NTHL160N120SC1 is between 10V and 15V. A higher gate drive voltage can reduce switching losses, but it may also increase the risk of gate oxide breakdown. A lower gate drive voltage can reduce the risk of gate oxide breakdown, but it may increase switching losses.
  • To protect the NTHL160N120SC1 from overvoltage and overcurrent, it's recommended to use a voltage clamp circuit and a current sense resistor. The voltage clamp circuit should be designed to limit the voltage across the device to less than 120% of the maximum rated voltage. The current sense resistor should be used to monitor the current through the device and trigger an overcurrent protection circuit if the current exceeds the maximum rated value.
  • The recommended PCB layout for the NTHL160N120SC1 involves using a 2-layer or 4-layer PCB with a solid ground plane and a separate power plane. The device should be placed close to the power source, and the gate drive circuit should be placed close to the device. Use wide, low-impedance traces for the power and ground connections, and use a Kelvin connection for the gate drive signal.

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NTHL160N120SC1 Overview

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