NTHL1 Model Download Search Results
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NTHL110N65S3F
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1 | 700 V @ TJ = 150 °C; Ultra Low Gate Charge (Typ. Qg = 58 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 553 pF); Excellent body diode performance (low Qrr, robust body diode); Optimized Capacitance; RoHS Compliant; 100% Avalanche Tested; Typ. RDS(on) = 98 mΩ | Transistor Outline, Vertical | NTHL110N65S3F |
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NTHL1000N170M1
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1 | 18V to 20V Gate Drive; New 1700V M1 technology: 28mohm RDS(ON) with low EON and EOFF losses; 100% Avalanche Tested | Transistor Outline, Vertical | NTHL1000N170M1 |
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NTHL160N120SC1
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1 | Silicon Carbide (SiC) MOSFET – EliteSiC, 160 mohm, 1200V, M1, TO-247-3L | Transistor Outline, Vertical | NTHL160N120SC1 |
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NTHL190N65S3HF
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1 | 700 V @ TJ = 150 °C; Ultra Low Gate Charge (Typ. Qg = 35 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 467 pF); Excellent body diode performance (low Qrr, robust body diode); Optimized Capacitance; RoHS Compliant; 100% Avalanche Tested; Typ. RDS(on) = 161 mΩ | Transistor Outline, Vertical | NTHL190N65S3HF |
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NTHL125N65S3H
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1 | Power Field-Effect Transistor, 24A I(D), 650V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | NTHL125N65S3H |
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NTHL120N60S5Z
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1 | Ultra Low Gate Charge (Typ. Qg= 39 nC); Low Time Related Output Capacitance (Typ. Coss(tr.)= 547 pF); Optimized Capacitance; 650 V @ TJ = 150°C; Typ. RDS(on) = 96 m Ω; 100% Avalanche Tested; RoHS Compliant; Internal Gate Resistance: 3.5 Ω | NTHL120N60S5Z |
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NTHL185N60S5H
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1 | Ultra Low Gate Charge (Typ. Qg = 25 nC); Low Time Related Output Capacitance (Typ. COSS(tr.) = 372 pF); Fast switching performance with robust body diode; 650 V @ TJ = 150°C; Typ. RDS(on) = 148 m Ω; 100% Avalanche Tested; RoHS Compliant; Internal Gate Resistance: 0.9 Ω | NTHL185N60S5H |
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