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NTHL190N65S3HF - onsemi

Description: 700 V @ TJ = 150 °C; Ultra Low Gate Charge (Typ. Qg = 35 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 467 pF); Excellent body diode performance (low Qrr, robust body diode); Optimized Capacitance; RoHS Compliant; 100% Avalanche Tested; Typ. RDS(on) = 161 mΩ

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NTHL190N65S3HF - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - 3-Pin TO-247 O
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NTHL190N65S3HF - onsemi  - 3D model - Transistor Outline, Vertical - 3-Pin TO-247 O
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NTHL190N65S3HF Details

  • Manufacturer Part Number:

    NTHL190N65S3HF

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247-3LD

  • Manufacturer Package Code:

    340CX

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Date Of Intro:

    2019-01-17

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    220 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    20 A

  • Drain-source On Resistance-Max:

    0.19 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    162 W

  • Pulsed Drain Current-Max (IDM):

    50 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTHL190N65S3HF Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves using a thermal pad on the bottom of the device, connecting it to a large copper area on the PCB, and using multiple vias to dissipate heat to the other layers. A minimum of 2oz copper thickness is recommended.
  • To ensure the device is properly biased, make sure to follow the recommended biasing circuitry and voltage levels as shown in the datasheet. Additionally, ensure that the gate-source voltage (Vgs) is within the recommended range and that the device is not operated in the linear region for extended periods.
  • Operating the device at high temperatures can lead to reduced performance, increased power losses, and decreased lifespan. It is essential to ensure that the device is operated within the recommended temperature range and that proper thermal management is implemented to prevent overheating.
  • To protect the device from ESD, follow proper handling and storage procedures, use ESD-safe materials and equipment, and ensure that the device is properly grounded during assembly and testing. Additionally, consider using ESD protection devices or circuits in the design.
  • The NTHL190N65S3HF has undergone various reliability and ruggedness tests, including high-temperature operating life (HTOL), high-temperature storage life (HTSL), and electrostatic discharge (ESD) testing. The device has also been qualified to meet the requirements of the Automotive Electronics Council (AEC) and the International Electrotechnical Commission (IEC).

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NTHL190N65S3HF Overview

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