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NTHL185N60S5H - onsemi

Description: Ultra Low Gate Charge (Typ. Qg = 25 nC); Low Time Related Output Capacitance (Typ. COSS(tr.) = 372 pF); Fast switching performance with robust body diode; 650 V @ TJ = 150°C; Typ. RDS(on) = 148 m Ω; 100% Avalanche Tested; RoHS Compliant; Internal Gate Resistance: 0.9 Ω

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NTHL185N60S5H Details

  • Manufacturer Part Number:

    NTHL185N60S5H

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247-3LD

  • Manufacturer Package Code:

    340CX

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    124 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    15 A

  • Drain-source On Resistance-Max:

    0.185 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    116 W

  • Pulsed Drain Current-Max (IDM):

    53 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTHL185N60S5H Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the NTHL185N60S5H is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • To ensure proper cooling, it's essential to provide a sufficient heat sink and thermal interface material (TIM) between the device and the heat sink. The heat sink should be designed to dissipate the maximum power dissipation of the device, and the TIM should have a thermal conductivity of at least 5 W/m-K.
  • The recommended gate drive voltage for the NTHL185N60S5H is between 10V and 15V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency. It's recommended to consult the datasheet and application notes for more information.
  • To protect the NTHL185N60S5H from overvoltage and overcurrent, it's recommended to use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, a current sense resistor and a fuse can be used to detect and respond to overcurrent conditions.
  • The recommended PCB layout and routing for the NTHL185N60S5H involves keeping the power traces short and wide, using a solid ground plane, and minimizing the inductance of the power loop. It's also recommended to use a 4-layer PCB with a dedicated power plane and a dedicated ground plane.

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NTHL185N60S5H Overview

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