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NTJD1155LT1G - onsemi

Description: Extremely Low RDS(on) P-Channel Load Switch MOSFET; Level Shift MOSFET is ESD Protected; Low Profile, Small Footprint Package; VIN Range 1.8 to 8.0 V; ON/OFF Range 1.5 to 8.0 V

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PCB Footprints
NTJD1155LT1G - onsemi PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - SC-88 SC70-6 CASE 419B-02 ISSUE Y
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3D Models
NTJD1155LT1G - onsemi  - 3D model - SOT23 (6-Pin) - SC-88 SC70-6 CASE 419B-02 ISSUE Y
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NTJD1155LT1G Details

  • Manufacturer Part Number:

    NTJD1155LT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SC-88/SC70-6/SOT-363 6 LEAD

  • Package Description:

    SC-88, 6 PIN

  • Pin Count:

    6

  • Manufacturer Package Code:

    419B-02

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.9

  • Configuration:

    COMPLEX

  • DS Breakdown Voltage-Min:

    8 V

  • Drain Current-Max (ID):

    1.3 A

  • Drain-source On Resistance-Max:

    0.175 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Packing Method:

    TR

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL AND P-CHANNEL

  • Power Dissipation-Max (Abs):

    0.4 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTJD1155LT1G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias under the device can help to dissipate heat efficiently. The datasheet provides a recommended land pattern, but a more detailed layout guide can be found in the onsemi application note AND9093/D.
  • The NTJD1155LT1G requires a bias voltage of 2.5V to 5.5V on the VCC pin. A stable voltage regulator and decoupling capacitors are recommended to ensure a clean power supply. Additionally, the input pins should be terminated with a 50Ω resistor to prevent ringing and ensure signal integrity.
  • While the datasheet specifies a maximum frequency of 1.5 GHz, the actual operating frequency may be limited by the specific application and PCB layout. In general, the device can operate up to 2.5 GHz with proper design and layout considerations.
  • The NTJD1155LT1G has built-in ESD protection, but additional protection measures can be taken to prevent damage. Use ESD-sensitive handling procedures, and consider adding external ESD protection devices, such as TVS diodes, to the PCB design.
  • The NTJD1155LT1G has a maximum junction temperature of 150°C. Ensure good airflow around the device, and consider using a heat sink or thermal interface material to reduce thermal resistance. The device's thermal pad should be connected to a solid ground plane to facilitate heat dissipation.

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NTJD1155LT1G Overview

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