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NTJD4158CT1G - onsemi

Description: Leading 20 V Trench for Low RDS(on) Performance; ESD Protected Gate; SC-88 Package for Small Footprint (2x2 mm); RoHS Compliant

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PCB Footprints
NTJD4158CT1G - onsemi PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - SC-88(SOT-363) CASE 419B-02 ISSUE Y
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3D Models
NTJD4158CT1G - onsemi  - 3D model - SOT23 (6-Pin) - SC-88(SOT-363) CASE 419B-02 ISSUE Y
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NTJD4158CT1G Details

  • Manufacturer Part Number:

    NTJD4158CT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SC-88/SC70-6/SOT-363 6 LEAD

  • Package Description:

    SC-88, SC-70, 6 PIN

  • Pin Count:

    6

  • Manufacturer Package Code:

    419B-02

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.5

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    0.25 A

  • Drain-source On Resistance-Max:

    2.5 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    12 pF

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL AND P-CHANNEL

  • Power Dissipation-Max (Abs):

    0.27 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTJD4158CT1G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Ensure proper heat sinking, use a thermal interface material, and follow the recommended PCB layout. Also, consider derating the device's power handling at high temperatures.
  • The SOA is typically defined by the device's voltage, current, and power ratings. For NTJD4158CT1G, the SOA is limited by the maximum voltage (Vds) of 150V, maximum current (Id) of 15A, and maximum power dissipation (Pd) of 100W.
  • Use ESD-sensitive handling procedures, such as grounding straps and wrist straps, during device handling and assembly. Also, consider adding ESD protection devices, like TVS diodes, in the circuit design.
  • Use a soldering temperature of 260°C (500°F) for a maximum of 10 seconds. Ensure the device is not exposed to temperatures above 300°C (572°F) during soldering.

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