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NTK3134NT5G - onsemi

Description: N channel Switch with Low RDS(on); 44% Smaller Footprint and 38% Thinner than SC89; Low Threshold Levels, 1.5V RDS(on) Rating; Operated at Low Logic Level Gate Drive; RoHS Compliant

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NTK3134NT5G - onsemi PCB footprint - Other - Other - NTK3134NT5G-1
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NTK3134NT5G - onsemi  - 3D model - Other - NTK3134NT5G-1
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NTK3134NT5G Details

  • Manufacturer Part Number:

    NTK3134NT5G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-723 3 LEAD

  • Pin Count:

    3

  • Manufacturer Package Code:

    631AA

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    20 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.9

  • Configuration:

    SINGLE WITH BUILT-IN DIODE AND RESISTOR

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    0.89 A

  • Drain-source On Resistance-Max:

    0.35 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    15 pF

  • JESD-30 Code:

    R-PDSO-F3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.55 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTK3134NT5G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a thermal relief pattern and a solid ground plane is recommended. The thermal pad should be connected to a large copper area to dissipate heat efficiently.
  • The device requires a stable input voltage and a bias circuit to ensure proper operation. A voltage regulator and a bias resistor network can be used to provide a stable voltage and current to the device.
  • The maximum allowed power dissipation for the NTK3134NT5G is 2.5W. Exceeding this limit can cause the device to overheat and fail.
  • The device is sensitive to ESD. Handling the device by the body or using an ESD wrist strap can prevent damage. Anti-static packaging and storage are also recommended.
  • The device should be stored in a dry, cool place with a temperature range of -40°C to 125°C and humidity below 60%.

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NTK3134NT5G Overview

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Small Signal Field-Effect Transistor, 0.75A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image NTK3134NT5H onsemi

Small Signal Field-Effect Transistor, 0.75A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET