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NTLJS5D0N03CTAG - onsemi

Description: Ultra Low RDS(on); Small Footprint of 4mm²; Pb−Free, Halogen−Free/BFR−Free

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NTLJS5D0N03CTAG - onsemi PCB footprint - Other - Other - NTLJS5D0N03CTAG-2
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NTLJS5D0N03CTAG - onsemi  - 3D model - Other - NTLJS5D0N03CTAG-2
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NTLJS5D0N03CTAG Details

  • Manufacturer Part Number:

    NTLJS5D0N03CTAG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    PQFN-6

  • Package Description:

    WDFN-6

  • Manufacturer Package Code:

    483AV

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    7.2

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    11.2 A

  • Drain-source On Resistance-Max:

    0.00725 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PDSO-N3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2.4 W

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTLJS5D0N03CTAG Frequently Asked Questions (FAQs)

  • A thermal pad is recommended under the package to improve heat dissipation. A minimum of 2oz copper thickness and a thermal relief pattern are suggested. Refer to onsemi's application note AND9173/D for more details.
  • The device requires a stable voltage supply and proper biasing to ensure optimal performance. A decoupling capacitor (e.g., 10uF) should be placed close to the device, and the input voltage should be filtered using a ferrite bead or a pi-filter.
  • The device has an integrated ESD protection diode, but additional external protection is recommended. A TVS diode (e.g., onsemi's NUP4301) can be used to protect the device from electrostatic discharge.
  • The device requires a specific power sequencing to prevent latch-up. The recommended power-up sequence is: VCC, then VDD, and finally the input signals. A power sequencing circuit or a dedicated power management IC can be used to ensure proper sequencing.
  • The device has a maximum junction temperature (TJ) of 150°C. Ensure good airflow, use a heat sink if necessary, and avoid thermal hotspots. A thermal interface material (TIM) can be used to improve heat transfer between the device and the heat sink.

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NTLJS5D0N03CTAG Overview

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