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NTMFD1D4N02P1E - onsemi

Description: MOSFET – Power, Dual, N-Channel, POWERTRENCH, Power Clip, Asymmetric, 25V, RoHS Compliant

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NTMFD1D4N02P1E - onsemi PCB footprint - Other - Other - PQFN8 5.00x6.00x0.75, 1.27P CASE 483AR ISSUE D_1
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NTMFD1D4N02P1E - onsemi  - 3D model - Other - PQFN8 5.00x6.00x0.75, 1.27P CASE 483AR ISSUE D_1
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NTMFD1D4N02P1E Details

  • Manufacturer Part Number:

    NTMFD1D4N02P1E

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    End Of Life

  • Part Package Code:

    PQFN-8

  • Manufacturer Package Code:

    483AR

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2020-01-17

  • Manufacturer:

    onsemi

  • YTEOL:

    1

  • Case Connection:

    SOURCE

  • Configuration:

    SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    25 V

  • Drain Current-Max (ID):

    74 A

  • Drain-source On Resistance-Max:

    0.0033 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    22 pF

  • JESD-30 Code:

    R-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    25 W

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTMFD1D4N02P1E Frequently Asked Questions (FAQs)

  • A good PCB layout for optimal thermal performance would involve placing thermal vias under the device, using a solid ground plane, and keeping the thermal path as short as possible. It's also recommended to use a thermal pad on the bottom of the device and connect it to a thermal plane or a heat sink.
  • To ensure proper biasing, follow the recommended operating conditions in the datasheet. Make sure to provide a stable voltage supply, and use a suitable bias resistor to set the gate-source voltage. Additionally, ensure the device is operated within the recommended temperature range.
  • Operating the device beyond the recommended maximum junction temperature can lead to reduced performance, decreased lifespan, and potentially even device failure. It's essential to ensure the device is properly cooled and operated within the recommended temperature range to maintain reliability and performance.
  • To handle ESD protection, follow proper handling and storage procedures for the device. Use an ESD wrist strap or mat when handling the device, and ensure the PCB design includes ESD protection components such as TVS diodes or ESD protection arrays.
  • The recommended soldering conditions for the NTMFD1D4N02P1E involve using a soldering iron with a temperature of 260°C (500°F) for a maximum of 10 seconds. It's also recommended to use a solder with a melting point of 220°C (428°F) or higher.

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NTMFD1D4N02P1E Overview

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