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NTMT150N65S3HF - onsemi

Description: 700 V @ TJ = 150 °C; Excellent body diode performance (low Qrr, robust body diode); Ultra Low Gate Charge (Typ. Qg = 43 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 400 pF); Leadless Ultra-thin SMD package; Kelvin Source Configuration; Optimized Capacitance; Moisture Sensitivity Level 1 guarantee; Typ. RDS(on) = 121 mΩ; 100% Avalanche Tested; RoHS Compliant

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PCB Footprints
NTMT150N65S3HF - onsemi PCB footprint - Other - Other - TDFN4 8x8, 2P CASE 520AB ISSUE O_2022-1
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3D Models
NTMT150N65S3HF - onsemi  - 3D model - Other - TDFN4 8x8, 2P CASE 520AB ISSUE O_2022-1
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NTMT150N65S3HF Details

  • Manufacturer Part Number:

    NTMT150N65S3HF

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TDFN4 8.00x8.00x1.00, 2.00P

  • Package Description:

    QFN-4

  • Manufacturer Package Code:

    520AB

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Avalanche Energy Rating (Eas):

    275 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    24 A

  • Drain-source On Resistance-Max:

    0.15 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PSSO-N4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    192 W

  • Pulsed Drain Current-Max (IDM):

    60 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTMT150N65S3HF Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves using a thermal pad on the bottom of the package, connecting it to a large copper area on the PCB, and using multiple vias to dissipate heat to the other layers. A minimum of 2oz copper thickness is recommended.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended thermal design guidelines, use a suitable heat sink, and ensure good airflow around the device. Additionally, derating the device's power handling capability at high temperatures is recommended.
  • The maximum allowed voltage slew rate for NTMT150N65S3HF is typically around 10V/ns to 20V/ns. Exceeding this rate can lead to voltage overshoots, ringing, and EMI issues. It's recommended to use a gate resistor to control the slew rate and ensure reliable operation.
  • Yes, you can use multiple NTMT150N65S3HF devices in parallel to increase current handling. However, it's crucial to ensure that the devices are properly matched, and the gate drive signals are synchronized to prevent current imbalance and oscillations.
  • The recommended gate drive voltage for NTMT150N65S3HF is typically around 10V to 15V, with a current capability of up to 2A to 5A, depending on the application. A higher gate drive voltage can improve switching performance, but it may also increase power losses.

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NTMT150N65S3HF Overview

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