NTMT1 Model Download Search Results
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NTMT100N60S5H
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1 | 650V @ TJ = 150C; Leadless Ultra-thin SMD package; Kelvin Source Configuration; Moisture Sensitivity Level 1 guarantee; Internal Gate Resistance: 1.16 Ω; Ulta Low Gate Charge (Typ. Qg = 46.6 nC); Typ. RDS(on) = 80 mohm; 100% Avalanche Tested; RoHS Compliant | Other | NTMT100N60S5H |
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NTMT150N65S3HF
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1 | 700 V @ TJ = 150 °C; Excellent body diode performance (low Qrr, robust body diode); Ultra Low Gate Charge (Typ. Qg = 43 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 400 pF); Leadless Ultra-thin SMD package; Kelvin Source Configuration; Optimized Capacitance; Moisture Sensitivity Level 1 guarantee; Typ. RDS(on) = 121 mΩ; 100% Avalanche Tested; RoHS Compliant | Other | NTMT150N65S3HF |
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NTMT125N60S5H
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1 | 650V @ TJ = 150C; Leadless Ultra-thin SMD package; Kelvin Source Configuration; Ulta Low Gate Charge (Typ. Qg = 37.1 nC); Typ. RDS(on) = 100 mohm; 100% Avalanche Tested; RoHS Compliant; Moisture Sensitivity Level 1 guarantee; Internal Gate Resistance: 1.08 Ω | Other | NTMT125N60S5H |
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NTMT190N65S3HF
onsemi
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1 | Typ. RDS(on) =159 mΩ; 100% Avalanche Tested; RoHS Compliant; 700 V @ TJ = 150 °C; Excellent body diode performance (low Qrr, robust body diode); Ultra Low Gate Charge (Typ. Qg = 34 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 316 pF); Leadless Ultra-thin SMD package; Kelvin Source Configuration; Optimized Capacitance; Moisture Sensitivity Level 1 guarantee | Other | NTMT190N65S3HF |
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NTMT185N60S5H
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1 | 100% Avalanche Tested; RoHS Compliant; Internal Gate Resistance: 0.9 Ω; Kelvin Source Configuration; Moisture Sensitivity Level 1 guarantee; 650 V @ TJ = 150°C; Typ. RDS(on) = 148 m Ω; Fast switching performance with robust body diode; Ultra Low Gate Charge (Typ. Qg = 25 nC); Low Time Related Output Capacitance (Typ. COSS(tr.) = 372 pF); Leadless Ultra-thin SMD package | NTMT185N60S5H |
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NTMT110N65S3HF
onsemi
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1 | 700 V @ TJ = 150 °C; Excellent body diode performance (low Qrr, robust body diode); Ultra Low Gate Charge (Typ. Qg = 62 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 522 pF); Leadless Ultra-thin SMD package; Kelvin contact; Optimized Capacitance; Moisture Sensitivity Level 1 guarantee; Typ. RDS(on) = 98 mΩ; 100% Avalanche Tested; RoHS Compliant | NTMT110N65S3HF |
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NTMT190N65S3H
onsemi
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1 | Internal Gate Resistance: 1.1 Ω; Moisture Sensitivity Level 1 guarantee; Typ. RDS(on) = 156 m Ω; 100% Avalanche Tested; RoHS Compliant; Kelvin Source Configuration; Low Effective Output Capacitance (Typ. Coss(eff.) = 292 pF); Leadless Ultra-thin SMD package; Ultra Low Gate Charge (Typ. Qg = 31 nC); 700 V @ TJ = 150°C; Fast switching performance with robust body diode | NTMT190N65S3H |
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NTMT125N65S3H
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1 | 100% Avalanche Tested; RoHS Compliant; Internal Gate Resistance: 1.1 Ω; 700 V @ TJ = 150°C; Fast switching performance with robust body diode; Ultra Low Gate Charge (Typ. Qg = 44 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 379 pF); Leadless Ultra-thin SMD package; Kelvin Source Configuration; Moisture Sensitivity Level 1 guarantee; Typ. RDS(on) = 108 m Ω | NTMT125N65S3H |
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NTMT110N65S3F
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1 | Power Field-Effect Transistor, 30A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | NTMT110N65S3F |
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