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NTMT190N65S3H - onsemi

Description: Internal Gate Resistance: 1.1 Ω; Moisture Sensitivity Level 1 guarantee; Typ. RDS(on) = 156 m Ω; 100% Avalanche Tested; RoHS Compliant; Kelvin Source Configuration; Low Effective Output Capacitance (Typ. Coss(eff.) = 292 pF); Leadless Ultra-thin SMD package; Ultra Low Gate Charge (Typ. Qg = 31 nC); 700 V @ TJ = 150°C; Fast switching performance with robust body diode

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NTMT190N65S3H Details

  • Manufacturer Part Number:

    NTMT190N65S3H

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TDFN4 8.00x8.00x1.00, 2.00P

  • Package Description:

    TDFN-8

  • Manufacturer Package Code:

    520AB

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Avalanche Energy Rating (Eas):

    1.42 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    16 A

  • Drain-source On Resistance-Max:

    0.19 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    129 W

  • Pulsed Drain Current-Max (IDM):

    45 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTMT190N65S3H Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves using a thermal pad on the bottom of the package, connecting it to a large copper area on the PCB, and using multiple vias to dissipate heat to the other layers. A minimum of 2oz copper thickness is recommended.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended derating curves for voltage and current, and to ensure that the device is properly cooled. A maximum junction temperature of 150°C should not be exceeded.
  • The NTMT190N65S3H has an integrated ESD protection diode, but it's still recommended to follow proper ESD handling procedures during assembly and testing. A human body model (HBM) of 2kV and a machine model (MM) of 200V are recommended.
  • Yes, the NTMT190N65S3H can be used in a parallel configuration to increase current handling, but it's essential to ensure that the devices are properly matched and that the gate drive signals are synchronized to prevent uneven current sharing.
  • The recommended gate drive voltage for the NTMT190N65S3H is between 10V and 15V, with a current capability of at least 2A. A gate resistor of 10Ω to 20Ω is recommended to prevent oscillations.

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NTMT190N65S3H Overview

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