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NTMT190N65S3HF - onsemi

Description: Typ. RDS(on) =159 mΩ; 100% Avalanche Tested; RoHS Compliant; 700 V @ TJ = 150 °C; Excellent body diode performance (low Qrr, robust body diode); Ultra Low Gate Charge (Typ. Qg = 34 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 316 pF); Leadless Ultra-thin SMD package; Kelvin Source Configuration; Optimized Capacitance; Moisture Sensitivity Level 1 guarantee

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NTMT190N65S3HF - onsemi PCB footprint - Other - Other - TDFN4 8x8, 2P CASE 520AB ISSUE O
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NTMT190N65S3HF - onsemi  - 3D model - Other - TDFN4 8x8, 2P CASE 520AB ISSUE O
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NTMT190N65S3HF Details

  • Manufacturer Part Number:

    NTMT190N65S3HF

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TDFN4 8.00x8.00x1.00, 2.00P

  • Package Description:

    QFN-4

  • Manufacturer Package Code:

    520AB

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Avalanche Energy Rating (Eas):

    220 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    20 A

  • Drain-source On Resistance-Max:

    0.19 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PDSO-N5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    162 W

  • Pulsed Drain Current-Max (IDM):

    50 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTMT190N65S3HF Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves using a thermal pad on the bottom of the package, connecting it to a large copper area on the PCB, and using multiple vias to dissipate heat to the other layers. A minimum of 2oz copper thickness is recommended.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended thermal design guidelines, use a suitable heat sink, and ensure good airflow around the device. Additionally, the device should be operated within the specified junction temperature (Tj) range of -55°C to 150°C.
  • The NTMT190N65S3HF has an integrated ESD protection circuit, but it's still recommended to follow standard ESD handling procedures during assembly and testing. The device can withstand human body model (HBM) ESD pulses up to ±2000V and machine model (MM) ESD pulses up to ±200V.
  • Yes, the NTMT190N65S3HF is qualified for automotive and high-reliability applications. It meets the requirements of AEC-Q101 and is manufactured using a process that is compliant with IATF 16949. However, it's essential to consult with onsemi's application engineers to ensure the device meets the specific requirements of your application.
  • The optimal gate resistor value depends on the specific application requirements, such as switching frequency, voltage, and current. A general guideline is to use a gate resistor value between 10Ω and 100Ω. However, it's recommended to consult with onsemi's application engineers or perform simulations to determine the optimal value for your specific application.

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NTMT190N65S3HF Overview

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