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NTND31225CZTAG - onsemi

Description: Advanced Trench Complementary MOSFET; Offers a Low RDS(ON) Solution in the Ultra Small 0.65mm × 0.90mm Package; RoHS Compliant

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NTND31225CZTAG - onsemi PCB footprint - Other - Other - NTND31225CZTAG-2
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NTND31225CZTAG - onsemi  - 3D model - Other - NTND31225CZTAG-2
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NTND31225CZTAG Details

  • Manufacturer Part Number:

    NTND31225CZTAG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    XLLGA-6

  • Manufacturer Package Code:

    713AC

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.85

  • Configuration:

    SEPERATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    0.22 A

  • Drain-source On Resistance-Max:

    1.5 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PBCC-N6

  • JESD-609 Code:

    e4

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    CHIP CARRIER

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL AND P-CHANNEL

  • Power Dissipation-Max (Abs):

    0.125 W

  • Surface Mount:

    YES

  • Terminal Finish:

    Nickel/Palladium/Gold (Ni/Pd/Au)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTND31225CZTAG Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Ensure proper heat sinking, use a thermal interface material, and follow the recommended PCB layout. Also, consider derating the device's power handling at high temperatures.
  • The SOA is typically defined by the device's voltage, current, and power ratings. For NTND31225CZTAG, the SOA is limited by the maximum voltage (Vds) of 250V, maximum current (Id) of 12A, and maximum power dissipation (Pd) of 100W.
  • Use ESD-sensitive handling procedures, such as grounding wrist straps and using ESD-protective packaging. Also, consider adding ESD protection circuits or devices in the system design.
  • A gate drive circuit with a high current capability (e.g., 1A) and a voltage rating that matches the device's gate-source voltage (Vgs) rating is recommended. A gate resistor (Rg) value of 10-20 ohms is typical.

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NTND31225CZTAG Overview

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