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NTPF165N65S3H - onsemi

Description: 700 V @ TJ = 150°C; Ultra Low Gate Charge (Typ. Qg = 35 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 326 pF); Fast switching performance with robust body diode; 100% Avalanche Tested; RoHS Compliant; Typ. RDS(on) = 132 m Ω; Internal Gate Resistance: 1.1 Ω

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PCB Footprints
NTPF165N65S3H - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 FULLPAK CASE 221D-03
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3D Models
NTPF165N65S3H - onsemi  - 3D model - Transistor Outline, Vertical - TO-220 FULLPAK CASE 221D-03
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NTPF165N65S3H Details

  • Manufacturer Part Number:

    NTPF165N65S3H

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220-3 FullPak

  • Manufacturer Package Code:

    221D-03

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    163 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    19 A

  • Drain-source On Resistance-Max:

    0.165 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    33 W

  • Pulsed Drain Current-Max (IDM):

    53 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTPF165N65S3H Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the NTPF165N65S3H is -55°C to 150°C.
  • To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V and 10V, and the drain-source voltage (Vds) should be between 10V and 650V.
  • The recommended gate resistor value is between 1kΩ and 10kΩ, depending on the specific application and switching frequency.
  • To protect the NTPF165N65S3H from ESD, handle the device with an anti-static wrist strap or mat, and ensure the PCB is designed with ESD protection in mind.
  • The maximum allowable power dissipation for the NTPF165N65S3H is 150W, but this can be increased with proper heat sinking and thermal management.

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NTPF165N65S3H Overview

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