NTPF1 Model Download Search Results

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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
Part Image Part Image 1 700 V @ TJ = 150°C; Ultra Low Gate Charge (Typ. Qg = 35 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 326 pF); Fast switching performance with robust body diode; 100% Avalanche Tested; RoHS Compliant; Typ. RDS(on) = 132 m Ω; Internal Gate Resistance: 1.1 Ω Transistor Outline, Vertical NTPF165N65S3H 1 Download Model
Part Image Part Image 1 700 V @ TJ = 150 °C; Ultra Low Gate Charge (Typ. Qg = 35 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 467 pF); Excellent body diode performance (low Qrr, robust body diode); Optimized Capacitance; RoHS Compliant; 100% Avalanche Tested; Typ. RDS(on) = 161 mΩ Transistor Outline, Vertical NTPF190N65S3HF 1 Download Model
Part Image Part Image 1 Power MOSFET, N-Channel, SUPERFET® V, FAST, 600 V, 27 A, 100 m?, TO-220F Transistor Outline, Vertical NTPF100N60S5H 1 Download Model
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NTPF151M10D3YTF NIC Components Corp
1 Tantalum Capacitor, Tantalum (solid Polymer), NTPF151M10D3YTF 0 Build or Request
Part Image Part Image 1 700 V @ TJ = 150°C; Ultra Low Gate Charge (Typ. Qg = 44 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 379 pF); Fast switching performance with robust body diode; 100% Avalanche Tested; RoHS Compliant; Typ. RDS(on) = 108 m Ω; Internal Gate Resistance: 1.1 Ω NTPF125N65S3H 1 Download Model
Part Image Part Image 1 Power Field-Effect Transistor, 30A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB NTPF110N65S3HF 0 Build or Request
Part Image Part Image 1 Power Field-Effect Transistor, 24A I(D), 650V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB NTPF150N65S3HF 0 Build or Request
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NTPF157M10D(15)F NIC Components Corp
1 Tantalum Capacitor, Tantalum (solid Polymer), NTPF157M10D(15)F 0 Build or Request
Part Image Part Image 1 700 V @ TJ = 150°C; Ultra Low Gate Charge (Typ. Qg = 31 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 292 pF); Fast switching performance with robust body diode; 100% Avalanche Tested; RoHS Compliant; Typ. RDS(on) = 156 m Ω; Internal Gate Resistance: 1.1 Ω NTPF190N65S3H 1 Download Model
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