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NTPF190N65S3H - onsemi

Description: 700 V @ TJ = 150°C; Ultra Low Gate Charge (Typ. Qg = 31 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 292 pF); Fast switching performance with robust body diode; 100% Avalanche Tested; RoHS Compliant; Typ. RDS(on) = 156 m Ω; Internal Gate Resistance: 1.1 Ω

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NTPF190N65S3H Details

  • Manufacturer Part Number:

    NTPF190N65S3H

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220-3 FullPak

  • Manufacturer Package Code:

    221D-03

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    142 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    16 A

  • Drain-source On Resistance-Max:

    0.19 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    32 W

  • Pulsed Drain Current-Max (IDM):

    45 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTPF190N65S3H Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves using a minimum of 2 oz copper thickness, a thermal relief pattern under the device, and a solid copper pour on the top and bottom layers. Additionally, it's recommended to use vias to connect the thermal pad to the bottom layer to improve heat dissipation.
  • To ensure the device is properly biased for optimal performance, it's recommended to follow the application circuit shown in the datasheet, which includes a bootstrap circuit to generate the necessary gate drive voltage. Additionally, the gate-source voltage (Vgs) should be set between 5-10V to ensure proper turn-on and turn-off of the device.
  • The critical parameters to monitor during operation to prevent device failure include the junction temperature (Tj), drain-source voltage (Vds), and drain current (Id). It's recommended to monitor these parameters using external sensors and protection circuits to prevent overheating, overvoltage, and overcurrent conditions.
  • The maximum allowable power dissipation for the device can be calculated using the following formula: Pd = (Tj(max) - Ta) / Rth(j-a), where Pd is the maximum allowable power dissipation, Tj(max) is the maximum junction temperature, Ta is the ambient temperature, and Rth(j-a) is the thermal resistance from junction to ambient. The calculated value should be compared to the maximum power dissipation rating specified in the datasheet.
  • The recommended ESD protection measures for the device include using ESD-sensitive handling procedures during assembly, using ESD-protective packaging and storage materials, and incorporating ESD protection circuits in the application design, such as TVS diodes or ESD protection arrays.

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NTPF190N65S3H Overview

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