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NTR1P02T1G - onsemi

Description: Ultra Low On-Resistance Provides Higher Efficiency and Extends Battery Life; Power Mangement in Portable and Battery-Powered Products; Minature SOT-23 Surface Mount Package Saves Board Space; RoHS Compliant

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PCB Footprints
NTR1P02T1G - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23 (TO-236) CASE 318-08
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3D Models
NTR1P02T1G - onsemi  - 3D model - SOT23 (3-Pin) - SOT-23 (TO-236) CASE 318-08
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NTR1P02T1G Details

  • Manufacturer Part Number:

    NTR1P02T1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-23 (TO-236) 3 LEAD

  • Package Description:

    TO-236, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    318

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.9

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    1 A

  • Drain-source On Resistance-Max:

    0.18 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    0.4 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTR1P02T1G Frequently Asked Questions (FAQs)

  • A thermal pad on the bottom of the package should be connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
  • Ensure that the device is operated within the recommended junction temperature (Tj) range of -40°C to 150°C. Also, consider the power dissipation and thermal resistance of the package when designing the system.
  • The device has built-in ESD protection, but it's still recommended to follow proper ESD handling procedures during assembly and testing. A minimum of 2kV HBM and 100V MM protection is recommended.
  • Yes, the NTR1P02T1G is qualified for automotive and high-reliability applications. However, additional testing and validation may be required to meet specific industry standards.
  • The optimal gate resistor value depends on the specific application and switching frequency. A general guideline is to use a value between 10Ω to 100Ω. Consult the onsemi application note for more information.

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NTR1P02T1G Overview

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Part Image NTR1P02LT1G Rochester Electronics LLC

1300mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, HALOGEN FREE AND LEAD FREE, MINIATURE, CASE 318-08, 3 PIN

Part Image NTR1P02T1 Rochester Electronics LLC

1000mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, MINIATURE, CASE 318-09, TO-236, 3 PIN

Part Image NTR1P02LT1 Rochester Electronics LLC

1300mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, MINIATURE, CASE 318-08, 3 PIN

Part Image NTR1P02T3G onsemi

Small Signal Field-Effect Transistor, 1A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Part Image NTR1P02T3 onsemi

Small Signal Field-Effect Transistor, 1A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

For a full list of alternate parts for NTR1P02T1G, check out Findchips.com