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NTR4501NT1G - onsemi

Description: Leading Planar Technolgy for Low Gate Charge / Fast Switching; 2.5 V rated for Low Voltage Gate Drive; SOT-23 Surface Mount For Small Footprint (3 mm x 3 mm); RoHS Compliant

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PCB Footprints
NTR4501NT1G - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23 (TO-236) CASE 318-08
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NTR4501NT1G - onsemi  - 3D model - SOT23 (3-Pin) - SOT-23 (TO-236) CASE 318-08
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NTR4501NT1G Details

  • Manufacturer Part Number:

    NTR4501NT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-23 (TO-236) 3 LEAD

  • Package Description:

    SOT-23, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    318

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5.32

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    3.2 A

  • Drain-source On Resistance-Max:

    0.08 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    50 pF

  • JEDEC-95 Code:

    TO-236

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1.25 W

  • Pulsed Drain Current-Max (IDM):

    10 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    30 ns

  • Turn-on Time-Max (ton):

    37 ns

NTR4501NT1G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Ensure proper heat sinking, use a thermal interface material, and follow the recommended PCB layout. Also, consider derating the device's power dissipation at high temperatures.
  • The maximum allowed voltage on the input pins is 5.5V, which is the absolute maximum rating. However, for reliable operation, it's recommended to keep the input voltage below 5V.
  • Yes, the NTR4501NT1G can be used in high-frequency switching applications up to 100 kHz. However, ensure proper PCB layout, decoupling, and filtering to minimize electromagnetic interference (EMI).
  • Use ESD protection devices, such as TVS diodes or ESD arrays, on the input and output pins. Also, follow proper handling and storage procedures to prevent ESD damage.

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NTR4501NT1G Overview

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Image Part Number Model
Part Image NTR4501NT1 Rochester Electronics LLC

3.2A, 20V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-236AB, CASE 318-08, TO-236, 3 PIN

Part Image NTR4501NT3 Rochester Electronics LLC

3.2A, 20V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-236AB, CASE 318-08, TO-236, 3 PIN

Part Image NTR4501NT1 onsemi

Power Field-Effect Transistor, 3.2A I(D), 20V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB