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NTR4503NT1G - onsemi

Description: Leading Planar Technolgy for Low Gate Charge/Fast Switching; 4.5 V Rated for Low Voltage Gate Drive; SOT-23 Surface Mount for Small Footprint (3x3mm); RoHS Compliant

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PCB Footprints
NTR4503NT1G - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23 (TO-236) CASE 318-08
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3D Models
NTR4503NT1G - onsemi  - 3D model - SOT23 (3-Pin) - SOT-23 (TO-236) CASE 318-08
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NTR4503NT1G Details

  • Manufacturer Part Number:

    NTR4503NT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-23 (TO-236) 3 LEAD

  • Package Description:

    CASE 318-08, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    318

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    6.9

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    1.5 A

  • Drain-source On Resistance-Max:

    0.11 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    25 pF

  • JEDEC-95 Code:

    TO-236

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.73 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTR4503NT1G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Ensure proper heat sinking, use a thermal interface material, and follow the recommended PCB layout. Also, consider derating the device's power handling at high temperatures.
  • The SOA is typically defined by the device's voltage, current, and power ratings. For the NTR4503NT1G, the SOA is limited by the maximum voltage (30V), current (3A), and power (10W) ratings.
  • Use ESD protection devices, such as TVS diodes or ESD arrays, and follow proper handling and storage procedures to prevent ESD damage.
  • Store the device in a dry, cool place, away from direct sunlight and moisture. Handle the device by the body, not the leads, and use anti-static wrist straps or mats to prevent ESD damage.

Trust Checks

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NTR4503NT1G Overview

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Part Image NTR4503NT3G Rochester Electronics LLC

1500mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, CASE 318-09, 3 PIN

Part Image NTR4503NT1 Rochester Electronics LLC

1500mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, CASE 318-09, 3 PIN

Part Image NTR4503NT1 onsemi

Small Signal Field-Effect Transistor, 1.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Part Image NTR4503NT3G onsemi

Small Signal Field-Effect Transistor, 1.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB