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NTRV4101PT1G - onsemi

Description: Leading -20 V Trench for Low RDS(on); -1.8 V Rated for Low Voltage Gate Drive; SOT-23 Surface Mount for Small Footprint; Qualified to AEC Q101; PPAP Capable; RoHS Compliant

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NTRV4101PT1G - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23 (TO-236) CASE 318-08 ISSUE AR
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NTRV4101PT1G - onsemi  - 3D model - SOT23 (3-Pin) - SOT-23 (TO-236) CASE 318-08 ISSUE AR
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NTRV4101PT1G Details

  • Manufacturer Part Number:

    NTRV4101PT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-23 (TO-236) 3 LEAD

  • Pin Count:

    3

  • Manufacturer Package Code:

    318

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.95

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    1.8 A

  • Drain-source On Resistance-Max:

    0.085 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    75 pF

  • JEDEC-95 Code:

    TO-236

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    0.73 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTRV4101PT1G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Ensure proper heat sinking, use a thermal interface material, and follow the recommended PCB layout. Also, consider derating the device's power handling at high temperatures.
  • The maximum allowed voltage transient on the input pins is ±500 mV, with a duration of less than 100 ns. Exceeding this may cause device damage or malfunction.
  • Yes, the NTRV4101PT1G is AEC-Q100 qualified and suitable for high-reliability and automotive applications. However, ensure that the device is used within its specified operating conditions and follow the recommended design guidelines.
  • Check the input voltage, output load, and PCB layout. Verify that the device is properly decoupled and that the output capacitor is of sufficient value. Also, check for any signs of overheating or electrical overstress.

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NTRV4101PT1G Overview

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Part Image NTR4101PT1H onsemi

Small Signal Field-Effect Transistor, 1.8A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB