Part Image

NTS2101PT1G - onsemi

Description: Leading Trench Technology for Low RDS(on) Extending Battery Life; -1.8 V Rated for Low Voltage Gate Drive; SC-70 Surface Mount for Small Footprint (2x2 mm)

Download NTS2101PT1G Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
NTS2101PT1G - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SC-70 (SOT-323) CASE419-04 ISSUE M
click to zoom
3D Models
NTS2101PT1G - onsemi  - 3D model - SOT23 (3-Pin) - SC-70 (SOT-323) CASE419-04 ISSUE M
click to zoom

NTS2101PT1G Details

  • Manufacturer Part Number:

    NTS2101PT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SC-70 (SOT-323) 3 LEAD

  • Package Description:

    LEAD FREE, CASE 419-04, SC-70, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    419-04

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    6.95

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    8 V

  • Drain Current-Max (ID):

    1.4 A

  • Drain-source On Resistance-Max:

    0.1 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    0.96 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTS2101PT1G Frequently Asked Questions (FAQs)

  • A thermal pad is recommended under the package to improve thermal performance. A minimum of 2 oz copper thickness is recommended for the thermal pad, and it should be connected to a solid ground plane to dissipate heat efficiently.
  • Ensure that the device is operated within the recommended junction temperature range (TJ) of -40°C to 150°C. Also, consider the power dissipation and thermal resistance of the device when designing the system.
  • The NTS2101PT1G has built-in ESD protection, but it's still recommended to follow standard ESD handling procedures when handling the device. A minimum of 2 kV human body model (HBM) and 200 V machine model (MM) ESD protection is recommended.
  • Yes, the NTS2101PT1G is qualified for automotive and high-reliability applications. It meets the AEC-Q100 qualification standard for automotive applications and is suitable for use in high-reliability systems.
  • The recommended storage temperature range for the NTS2101PT1G is -40°C to 150°C. Storage outside this range may affect the device's reliability and performance.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

NTS2101PT1G Overview

Use the download button to access the NTS2101PT1G schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like NTS21, or try a keyword search, such as Small Signal Field-Effect Transistors

Parts related to NTS2101PT1G

Showing 0 results

NTS2101PT1G Alternates

Showing results

Image Part Number Model
Part Image NTS2101PT1 onsemi

Small Signal Field-Effect Transistor, 1.4A I(D), 8V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET