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NTZD3155CT2G - onsemi

Description: Leading Trench Technology for Low RDS(on) Performance; High Efficiency System Performance; Low Threshold Voltage; ESD Protected Gate; Small Footprint 1.6 x 1.6 mm; RoHS Compliant

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NTZD3155CT2G - onsemi PCB footprint - SO Transistor Flat Lead - SO Transistor Flat Lead - SOT-563_2022
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NTZD3155CT2G - onsemi  - 3D model - SO Transistor Flat Lead - SOT-563_2022
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NTZD3155CT2G Details

  • Manufacturer Part Number:

    NTZD3155CT2G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-563, 6 LEAD

  • Package Description:

    SOT-563, 6 PIN

  • Pin Count:

    6

  • Manufacturer Package Code:

    463A-01

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.8

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    0.54 A

  • Drain-source On Resistance-Max:

    0.55 Ω

  • FET Technology:

    TRENCH MOSFET

  • Feedback Cap-Max (Crss):

    20 pF

  • JESD-30 Code:

    R-PDSO-F6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL AND P-CHANNEL

  • Power Dissipation-Max (Abs):

    0.25 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTZD3155CT2G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Ensure proper heat sinking, use a thermal interface material, and follow the recommended PCB layout. Also, consider derating the device's power handling at high temperatures.
  • The SOA is not explicitly stated in the datasheet. However, it can be estimated by considering the device's voltage, current, and power ratings. Consult with onsemi's application engineers for specific guidance.
  • Yes, the NTZD3155CT2G is AEC-Q101 qualified, making it suitable for automotive and high-reliability applications. However, ensure that you follow the recommended design and testing guidelines for these applications.
  • Use proper ESD handling and storage procedures, such as using anti-static bags, wrist straps, and mats. Also, consider adding ESD protection circuits in your design.

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NTZD3155CT2G Overview

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Part Image NTZD3155CT5G onsemi

Small Signal Field-Effect Transistor, 0.54A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Trench Mosfet FET