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NVBLS1D1N08H - onsemi

Description: Low RDS(on); Low QG and Capacitance; AEC−Q101 Qualified and PPAP Capable; RoHS Compliant

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PCB Footprints
NVBLS1D1N08H - onsemi PCB footprint - Other - Other - H−PSOF8L 11.68x9.80 CASE 100CU ISSUE C
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3D Models
NVBLS1D1N08H - onsemi  - 3D model - Other - H−PSOF8L 11.68x9.80 CASE 100CU ISSUE C
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NVBLS1D1N08H Details

  • Manufacturer Part Number:

    NVBLS1D1N08H

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-LL 8L

  • Manufacturer Package Code:

    100CU

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.9

  • Avalanche Energy Rating (Eas):

    1580 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    351 A

  • Drain-source On Resistance-Max:

    0.00105 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    49 pF

  • JEDEC-95 Code:

    MO-299A

  • JESD-30 Code:

    R-PSSO-F2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    311 W

  • Pulsed Drain Current-Max (IDM):

    900 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVBLS1D1N08H Frequently Asked Questions (FAQs)

  • A thermal pad on the bottom of the package should be connected to a large copper area on the PCB to dissipate heat. Multiple vias can be used to connect the thermal pad to an inner layer or the backside of the PCB to further improve thermal performance.
  • Ensure that the device is operated within the recommended temperature range (-40°C to 150°C). Use a heat sink or thermal interface material to reduce the junction temperature. Also, consider derating the device's power handling capability at high temperatures.
  • A gate drive voltage of 10-15V is recommended for optimal switching performance. However, the device can operate with a gate drive voltage as low as 6V, but with reduced switching performance.
  • Handle the device by the body or use an ESD wrist strap to prevent ESD damage. Use ESD-protected equipment and follow proper ESD handling procedures during assembly and testing.
  • A soldering profile with a peak temperature of 260°C and a dwell time of 30-60 seconds is recommended. Ensure that the device is not exposed to temperatures above 260°C for an extended period.

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NVBLS1D1N08H Overview

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