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NVBLS1D2N08XTXG - onsemi

Description: Single N-Channel Power MOSFET 80V, 299 A, 1.1 mΩ

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PCB Footprints
NVBLS1D2N08XTXG - onsemi PCB footprint - Other - Other - H−PSOF8L 11.68 x 9.80x2.30, 1.20P CASE 100CU ISSUE F
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3D Models
NVBLS1D2N08XTXG - onsemi  - 3D model - Other - H−PSOF8L 11.68 x 9.80x2.30, 1.20P CASE 100CU ISSUE F
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NVBLS1D2N08XTXG Details

  • Manufacturer Part Number:

    NVBLS1D2N08XTXG

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • Avalanche Energy Rating (Eas):

    530 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    299 A

  • Drain-source On Resistance-Max:

    0.0011 Ω

  • FET Technology:

    METAL SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    37 pF

  • JESD-30 Code:

    R-PDSO-F8

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    197 W

  • Pulsed Drain Current-Max (IDM):

    1941 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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NVBLS1D2N08XTXG Overview

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