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NVBLS4D0N15MC - onsemi

Description: Low RDS (ON); Low QG and Capacitance; AEC−Q101 Qualified and PPAP Capable; RoHS Compliant

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PCB Footprints
NVBLS4D0N15MC - onsemi PCB footprint - Other - Other - H−PSOF8L 11.68x9.80 CASE 100CU ISSUE C
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NVBLS4D0N15MC - onsemi  - 3D model - Other - H−PSOF8L 11.68x9.80 CASE 100CU ISSUE C
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NVBLS4D0N15MC Details

  • Manufacturer Part Number:

    NVBLS4D0N15MC

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-LL 8L

  • Manufacturer Package Code:

    100CU

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Date Of Intro:

    2020-04-03

  • Manufacturer:

    onsemi

  • YTEOL:

    6.2

  • Avalanche Energy Rating (Eas):

    332 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    187 A

  • Drain-source On Resistance-Max:

    0.0044 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MO-299A

  • JESD-30 Code:

    R-PDSO-F3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    316 W

  • Pulsed Drain Current-Max (IDM):

    2255 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NVBLS4D0N15MC Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the NVBLS4D0N15MC is -55°C to 150°C.
  • To ensure safe operating area, ensure the MOSFET is operated within the specified voltage, current, and temperature ratings. Also, consider the power dissipation and thermal management to prevent overheating.
  • The recommended gate drive voltage for the NVBLS4D0N15MC is between 4.5V and 10V to ensure proper switching and minimize power losses.
  • To minimize EMI, use proper PCB layout techniques, such as separating high-frequency and low-frequency circuits, using ground planes, and adding decoupling capacitors. Additionally, consider using EMI filters or shielding to reduce radiation.
  • The maximum allowable current for the NVBLS4D0N15MC is 15A, but this value may vary depending on the operating conditions and thermal management.

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NVBLS4D0N15MC Overview

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