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NVD2955T4G - onsemi

Description: Avalanche Energy Specified; IDSS and VDS(on) Specified at Elevated Temperature; Designed for Low Voltage, High Speed Switching Applications and to Withstand High Energy in the Avalanche and Commutation Modes; AEC−Q101 Qualified and PPAP Capable; RoHS Compliant

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NVD2955T4G - onsemi PCB footprint - Other - Other - DPAK (SINGLE GAUGE) TO-252 (369C) ISSUE F
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NVD2955T4G - onsemi  - 3D model - Other - DPAK (SINGLE GAUGE) TO-252 (369C) ISSUE F
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NVD2955T4G Details

  • Manufacturer Part Number:

    NVD2955T4G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    DPAK (SINGLE GAUGE) TO-252

  • Pin Count:

    3

  • Manufacturer Package Code:

    369C

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    216 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    12 A

  • Drain-source On Resistance-Max:

    0.18 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    55 W

  • Pulsed Drain Current-Max (IDM):

    18 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NVD2955T4G Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the NVD2955T4G is -40°C to 150°C.
  • To ensure proper biasing, connect the input pin to a voltage source through a resistor, and connect the output pin to a load through a resistor. Refer to the application note for specific biasing recommendations.
  • To minimize EMI, use a multi-layer PCB with a solid ground plane, keep the input and output traces short and away from each other, and use shielding or a Faraday cage if necessary.
  • Yes, the NVD2955T4G is qualified for use in high-reliability applications, including aerospace and automotive. However, additional testing and qualification may be required for specific applications.
  • To troubleshoot issues, check the PCB layout, ensure proper biasing, and verify that the input and output impedances are matched. Use oscilloscopes and spectrum analyzers to measure the input and output signals.

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NVD2955T4G Overview

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