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NTD2955G - onsemi

Description: Obsolete - Single N-Channel Power MOSFET 60V, 12A, 94mΩ

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NTD2955G - onsemi PCB footprint - Other - Other - NTD2955G-1
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NTD2955G Details

  • Manufacturer Part Number:

    NTD2955G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    DPAK (SINGLE GAUGE) TO-252

  • Pin Count:

    3

  • Manufacturer Package Code:

    369C

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    216 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    12 A

  • Drain-source On Resistance-Max:

    0.18 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    55 W

  • Pulsed Drain Current-Max (IDM):

    36 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTD2955G Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the NTD2955G is -55°C to 150°C.
  • To ensure proper biasing, connect the gate to a voltage source through a resistor, and connect the source to ground through a resistor. The recommended biasing voltage is typically around 10-15V.
  • The maximum current rating for the NTD2955G is 2.5A.
  • To protect the NTD2955G from ESD, handle the device with an anti-static wrist strap or mat, and ensure that all equipment and tools are properly grounded.
  • The recommended PCB layout for the NTD2955G includes a solid ground plane, short and wide traces for the drain and source pins, and a decoupling capacitor between the drain and source pins.

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NTD2955G Overview

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NTD2955G Alternates

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Part Image SVD2955T4G onsemi

Power Field-Effect Transistor, 12A I(D), 60V, 0.18ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image NTD2955G Rochester Electronics LLC

12A, 60V, 0.18ohm, P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, CASE 369C-01, DPAK-3

Part Image NVD2955T4G onsemi

Power Field-Effect Transistor, 12A I(D), 60V, 0.18ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image NTD2955 onsemi

Power Field-Effect Transistor, 12A I(D), 60V, 0.18ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image NTD2955PT4G onsemi

Power Field-Effect Transistor, 12A I(D), 60V, 0.18ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

For a full list of alternate parts for NTD2955G, check out Findchips.com